? semiconductor components industries, llc, 2001 august, 2001 rev. 0 1 publication order number: NTP22N06L/d NTP22N06L, ntb22n06l power mosfet 22 amps, 60 volts, logic level nchannel to220 and d 2 pak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 10 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs v gs 10 20 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p 10 m s) i d i d i dm 22 10 66 adc apk total power dissipation @ t a = 25 c derate above 25 c p d 60 0.4 w w/ c operating and storage temperature range t j , t stg 55 to +175 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 50 vdc, v gs = 5.0 vdc, l = 1.0 mh i l(pk) = 12 a, v ds = 60 vdc, r g = 25 w ) e as 72 mj thermal resistance junctiontocase junctiontoambient r q jc r q ja 2.5 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 22 amperes 60 volts r ds(on) = 65 m w device package shipping ordering information NTP22N06L to220ab 50 units/rail to220ab case 221a style 5 1 2 3 4 http://onsemi.com nchannel d s g marking diagrams & pin assignments ntx22n06l = device code x = p or b ll = location code y = year ww = work week ntx22n06l llyww 1 gate 3 source 4 drain 2 drain ntx22n06l llyww 1 gate 3 source 4 drain 2 drain 1 2 3 4 d 2 pak case 418b style 2 ntb22n06l d 2 pak 50 units/rail ntb22n06lt4 d 2 pak 800/tape & reel
NTP22N06L, ntb22n06l http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 1.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 68.2 81 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 15 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 1.) gate threshold voltage (note 1.) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 1.0 1.79 5.0 2.0 vdc mv/ c static draintosource onresistance (note 1.) (v gs = 5.0 vdc, i d = 11 adc) r ds(on) 57 65 m w static draintosource onvoltage (note 1.) (v gs = 5.0 vdc, i d = 22 adc) (v gs = 5.0 vdc, i d = 11 adc, t j = 150 c) v ds(on) 1.4 1.17 1.7 vdc forward transconductance (note 1.) (v ds = 7.0 vdc, i d = 11 adc) g fs 14.6 mhos dynamic characteristics input capacitance (v 25 vd v 0vd c iss 490 690 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 167 230 transfer capacitance f = 1 . 0 mhz) c rss 56 80 switching characteristics (note 2.) turnon delay time t d(on) 10 20 ns rise time (v dd = 30 vdc, i d = 22 adc, t r 115 230 turnoff delay time (v dd 30 vdc , i d 22 adc , v gs = 5.0 vdc, r g = 9.1 w ) (note 1.) t d(off) 21 40 fall time t f 56 120 gate charge (v 48 vd i 22 ad q t 10.4 20 nc (v ds = 48 vdc, i d = 22 adc, v gs = 5.0 vdc ) ( note 1. ) q 1 2.5 v gs = 5 . 0 vdc) (note 1 . ) q 2 7.0 sourcedrain diode characteristics forward onvoltage (i s = 22 adc, v gs = 0 vdc) (note 1.) (i s = 22 adc, v gs = 0 vdc, t j = 150 c) v sd 1.03 0.98 1.2 vdc reverse recovery time (i 22 ad v 0vd t rr 42 ns (i s = 22 adc, v gs = 0 vdc, di s /dt = 100 a/ m s ) ( note 1. ) t a 26 di s /dt = 100 a/ m s) (note 1 . ) t b 16 reverse recovery stored charge q rr 0.060 m c 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperatures.
NTP22N06L, ntb22n06l http://onsemi.com 3 0 0.16 0.12 40 30 20 0 10 50 t j = 25 c t j = 55 c t j = 100 c v gs = 10 v 0.08 0.04 50 30 20 10 0 v ds , draintosource voltage (volts) i d , drain current (amps) v gs , gatetosource voltage (volts) i d , drain current (amps) i d , drain current (amps) i d , drain current (amps) r ds(on) , draintosource resistance ( w ) r ds(on) , draintosource resistance ( w ) t j , junction temperature ( c) v ds , draintosource voltage (volts) r ds(on) , draintosource resistance (normalized) i dss , leakage (na) 2 1.8 1.4 1.6 1.2 1 0.6 10 1000 10000 03 2 1 figure 1. onregion characteristics figure 2. transfer characteristics 0 0.16 0.12 30 20 0 10 40 figure 3. onresistance versus gatetosource voltage figure 4. onresistance versus drain current and gate voltage figure 5. onresistance variation with temperature figure 6. draintosource leakage current versus voltage 50 50 50 25 0 25 75 125 100 1.8 3.4 6.6 2.6 03040 20 10 50 60 40 30 20 10 0 6 175 150 0.8 4 5 4.2 6 v v ds 10 v t j = 25 c t j = 55 c t j = 100 c t j = 25 c t j = 55 c t j = 100 c v gs = 5 v v gs = 0 v t j = 150 c t j = 100 c i d = 11 a v gs = 5 v v gs = 10 v 5.5 v 5 v 8 v 5 5.8 0.08 0.04 100 4.5 v 4 v 3.5 v 3 v 40
NTP22N06L, ntb22n06l http://onsemi.com 4 gatetosource or draintosource voltage (volts) c, capacitance (pf) q g , total gate charge (nc) v gs , gatetosource voltage (volts) r g , gate resistance ( w )v sd , sourcetodrain voltage (volts) i s , source current (amps) t, time (ns) v ds , draintosource voltage (volts) t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse draintosource avalanche energy (mj) 100 10 1 0.1 1000 100 1 6 5 4 3 2 1 0 80 60 20 40 0 24 20 16 12 4 0 10 1600 10 1400 1200 15 5 020 1000 800 600 400 0 5 figure 7. capacitance variation figure 8. gatetosource and draintosource voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature 25 0 10 8 4 1 10 100 0.6 0.76 0.68 0.92 1.08 0.1 10 100 1 25 125 150 100 75 175 50 200 0.84 10 12 1 i d = 22 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = 15 v single pulse t c = 25 c v ds = 30 v i d = 22 a v gs = 5 v v gs = 0 v t j = 25 c i d = 12 a t f t d(off) t d(on) t r r ds(on) limit q t q 2 q 1 10 ms 1 ms 100 m s dc v gs v ds thermal limit package limit 8 10 m s 26
NTP22N06L, ntb22n06l http://onsemi.com 5 r(t). effective transient thermal resistance (normalized) t, time ( m s) 0.1 1.0 0.01 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 1 10 0.1 0.01 0.001 0.0001 0.00001 figure 13. thermal response figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b
NTP22N06L, ntb22n06l http://onsemi.com 6 package dimensions to220 threelead to220ab case 221a09 issue aa style 5: pin 1. gate 2. drain 3 source notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
NTP22N06L, ntb22n06l http://onsemi.com 7 package dimensions d 2 pak case 418b03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
NTP22N06L, ntb22n06l http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. NTP22N06L/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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